The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2012
Filed:
Dec. 03, 2009
Hyun-suk Kwon, Seoul, KR;
Young-soo Lim, Cheongju-si, KR;
Sung-un Kwon, Jeonju-si, KR;
Yong-ho Ha, Hwaseong-si, KR;
Jeong-hee Park, Hwaseong-si, KR;
Joon-sang Park, Seoul, KR;
Myung-jin Kang, Suwon-si, KR;
Doo-hwan Park, Seoul, KR;
Hyun-Suk Kwon, Seoul, KR;
Young-Soo Lim, Cheongju-si, KR;
Sung-Un Kwon, Jeonju-si, KR;
Yong-Ho Ha, Hwaseong-si, KR;
Jeong-Hee Park, Hwaseong-si, KR;
Joon-Sang Park, Seoul, KR;
Myung-Jin Kang, Suwon-si, KR;
Doo-Hwan Park, Seoul, KR;
Abstract
A phase changeable memory unit includes a lower electrode, an insulating interlayer structure having an opening, a phase changeable material layer and an upper electrode. The lower electrode is formed on a substrate. The insulating interlayer structure has an opening and is formed on the lower electrode and the substrate. The opening exposes the lower electrode and has a width gradually decreasing downward. The phase changeable material layer fills the opening and partially covers an upper face of the insulating interlayer structure. The upper electrode is formed on the phase changeable material layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile