This inventor holds 1 USPTO granted patent. Top assignees: Fujifilm Corporation, Tokyo Institute of Technology. Active years: 2014.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
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Years Active: 2014
Title: Mutsuo Ishikawa: Innovator in Ferroelectric Materials
Introduction
Mutsuo Ishikawa is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of materials science, particularly in the development of ferroelectric devices. His innovative work has led to advancements in the manufacturing of perovskite oxide films.
Latest Patents
Ishikawa holds a patent for a perovskite oxide film and ferroelectric film, which includes a method for manufacturing the perovskite oxide film. The patent describes a perovskite oxide film formed on a substrate, characterized by an average film thickness of not less than 5 micrometers. The film comprises a perovskite oxide represented by a specific general formula, which includes various metal elements.
Career Highlights
Throughout his career, Mutsuo Ishikawa has worked with prominent organizations such as Fujifilm Corporation and the Tokyo Institute of Technology. His experience in these institutions has allowed him to refine his expertise in materials science and engineering.
Collaborations
Ishikawa has collaborated with esteemed colleagues, including Yukio Sakashita and Hiroshi Funakubo. These partnerships have contributed to the advancement of research in ferroelectric materials and their applications.
Conclusion
Mutsuo Ishikawa's contributions to the field of ferroelectric materials and his innovative patents highlight his role as a significant inventor in the industry. His work continues to influence advancements in materials science and technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile