The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2014

Filed:

Apr. 24, 2013
Applicants:

Fujifilm Corporation, Tokyo, JP;

Tokyo Institute of Technology, Tokyo, JP;

Inventors:

Yukio Sakashita, Ashigarakami-gun, JP;

Hiroshi Funakubo, Tokyo, JP;

Minoru Kurosawa, Tokyo, JP;

Mutsuo Ishikawa, Tokyo, JP;

Hiro Einishi, Tokyo, JP;

Takahisa Shiraishi, Tokyo, JP;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 41/18 (2006.01); H01L 41/187 (2006.01); C23C 4/10 (2006.01); C23C 26/00 (2006.01); C23C 30/00 (2006.01); H01L 21/02 (2006.01); H01L 41/317 (2013.01); C23C 28/04 (2006.01); C23C 28/00 (2006.01);
U.S. Cl.
CPC ...
H01L 41/1873 (2013.01); C23C 4/105 (2013.01); C23C 26/00 (2013.01); C23C 30/00 (2013.01); H01L 21/02197 (2013.01); H01L 41/18 (2013.01); H01L 41/317 (2013.01); C23C 28/042 (2013.01); C23C 28/322 (2013.01); C23C 28/3455 (2013.01); H01L 21/02282 (2013.01); H01L 21/02304 (2013.01);
Abstract

A perovskite oxide film is formed on a substrate, in which the perovskite oxide film has an average film thickness of not less than 5 μm and includes a perovskite oxide represented by a general formula (P) given below:(K,A,B)(Nb,C,D)O  (P),where: 0<w<1.0, 0≦x≦0.2, 0≦y<1.0, 0≦z≦0.2, 0<w+x<1.0, A is an A-site element having an ionic valence ofother than K, B is an A-site element, C is a B-site element having an ionic valence of, D is a B-site element, each of A to D is one kind or a plurality of kinds of metal elements.


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