Irbid, Jordan

Munther Kandah

This inventor holds 1 USPTO granted patent. Top assignee: Mcgill University. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Munther Kandah. Retrieved from https://idiyas.com/inventor/munther-kandah

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Munther Kandah: Innovator in Carbon Ion Source Technology

Introduction

Munther Kandah is a notable inventor based in Irbid, Jordan. He has made significant contributions to the field of vacuum arc deposition technology. His innovative work focuses on enhancing the efficiency and purity of carbon deposition processes.

Latest Patents

Kandah holds a patent for a "Particle-free cathodic arc carbon ion source." This invention presents a method and apparatus that inhibits or eliminates the emission of contaminating carbon particles in the ion plasma. By maintaining an elevated local plasma pressure at the cathode or target surface, his invention minimizes the role of heat conduction in the creation of these particles. This advancement strongly increases the electron emission cooling effects, making the process more efficient.

Career Highlights

Munther Kandah is affiliated with McGill University, where he continues to engage in research and development. His work has garnered attention for its potential applications in various industries, particularly in improving the quality of carbon coatings.

Collaborations

Kandah collaborates with Jean-Luc Meunier, contributing to the advancement of their shared research interests.

Conclusion

Munther Kandah's innovative contributions to carbon ion source technology highlight his role as a significant figure in the field of materials science. His patent reflects a commitment to improving industrial processes and advancing scientific knowledge.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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