Moëz Ben-Farah

Title: Moëz Ben-Farah: Innovator in Thin-Film CIGS Technology

Introduction

Moëz Ben-Farah is a notable inventor based in Avon, France. He has made significant contributions to the field of thin-film technology, particularly in the development of methods for creating copper indium gallium selenide (CIGS) films. His innovative approach has the potential to enhance the efficiency of solar cells.

Latest Patents

Moëz Ben-Farah holds a patent for a method of making thin-film CIGS. This invention involves electrochemically depositing a layer of stoichiometry close to CuInSe on a substrate. Following this, the layer is rapidly annealed using a light source that emits pulses of sufficient power to recrystallize the CIS. A key advantage of this method is that the electrodeposited elements are premixed, resulting in a homogeneous matrix that can withstand sudden temperature increases during the rapid annealing process. He has 1 patent to his name.

Career Highlights

Throughout his career, Moëz Ben-Farah has worked with prominent organizations such as Electricité de France and the Centre National de la Recherche Scientifique. His experience in these institutions has allowed him to refine his skills and contribute to significant advancements in energy technology.

Collaborations

Moëz has collaborated with esteemed colleagues, including Stéphane Taunier and Olivier Kerrec. Their combined expertise has fostered a productive environment for innovation and research.

Conclusion

Moëz Ben-Farah is a distinguished inventor whose work in thin-film CIGS technology showcases his commitment to advancing renewable energy solutions. His innovative methods and collaborations highlight the importance of teamwork in achieving groundbreaking results.