The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2006
Filed:
Apr. 23, 2003
Stéphane Taunier, Paris, FR;
Olivier Kerrec, Rueil Malmaison, FR;
Michel Mahe, Saint-Mammes, FR;
Denis Guimard, Paris, FR;
Moëz Ben-farah, Avon, FR;
Daniel Lincot, Antony, FR;
Jean-françois Guillemoles, Paris, FR;
Pierre-philippe Grand, Charenton-le-Pont, FR;
Pierre Cowache, Mitry-Mory, FR;
Jacques Vedel, Asnieres-sur-Seine, FR;
Stéphane Taunier, Paris, FR;
Olivier Kerrec, Rueil Malmaison, FR;
Michel Mahe, Saint-Mammes, FR;
Denis Guimard, Paris, FR;
Moëz Ben-Farah, Avon, FR;
Daniel Lincot, Antony, FR;
Jean-François Guillemoles, Paris, FR;
Pierre-Philippe Grand, Charenton-le-Pont, FR;
Pierre Cowache, Mitry-Mory, FR;
Jacques Vedel, Asnieres-sur-Seine, FR;
Electricite de France Service National, Paris, FR;
Centre National de la Recherche Scientifique-CNRS, Paris, FR;
Abstract
The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe; then rapidly annealing said layer from a light source with pulses of sufficient power to recrystallize CIS. Advantageously, the electrodeposited elements are premixed. Thus, after the deposition step, a homogeneous matrix is obtained which can support sudden temperature increases during the rapid annealing.