Shanghai, China

Moyang Chen

USPTO Granted Patents = 5 

Average Co-Inventor Count = 1.5

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2021-2025

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5 patents (USPTO):Explore Patents

Title: Moyang Chen: Innovator in Memory Device Technologies

Introduction

Moyang Chen is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of memory devices and storage systems, holding a total of five patents. His innovative approaches have the potential to enhance data transmission efficiency and storage medium evaluation.

Latest Patents

Moyang Chen's latest patents include a "Method for instruction transmission for memory devices and storage system." This application provides a method for instruction transmission for memory devices, which involves screening instruction flow in a controller and grouping instructions based on address requirements. The method aims to save address and command time consumption while releasing more bandwidth for data transmission. Another notable patent is titled "Systems and methods for evaluating a storage medium." This method includes evaluating a storage medium through a user interface and determining its status based on binding history tables.

Career Highlights

Moyang Chen is currently employed at Innogrit Technologies Co., Ltd., where he continues to develop innovative solutions in the realm of memory technology. His work focuses on improving the efficiency and reliability of storage systems, which is crucial in today's data-driven world.

Collaborations

Moyang collaborates with talented individuals such as Zining Wu and Tao Wei, contributing to a dynamic team environment that fosters innovation and creativity.

Conclusion

Moyang Chen's contributions to memory device technologies exemplify the spirit of innovation. His patents reflect a commitment to enhancing data transmission and storage evaluation, making a significant impact in the field.

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