Location History:
- Crolles, FR (2001 - 2003)
- Crollis, FR (2004)
Company Filing History:
Years Active: 2001-2004
Title: Mouloud Bakli: Innovator in Microelectronics
Introduction
Mouloud Bakli is a prominent inventor based in Crolles, France. He has made significant contributions to the field of microelectronics, particularly in the development of processes and products that enhance the performance of electronic devices. With a total of 4 patents to his name, Bakli's work is recognized for its innovative approaches to material science and device fabrication.
Latest Patents
Bakli's latest patents focus on advanced processes for creating barriers between dielectrics and conductors. One notable patent describes a method for forming a barrier layer over a high-k dielectric layer, which prevents intermigration between the dielectric and conducting layers. This innovation is crucial for maintaining the integrity of high-performance capacitors. Another patent outlines a process for tantalum nitride CVD deposition, which involves the densification of a metal oxide film to create a metal nitride layer. This method is particularly useful for forming microelectronic devices with enhanced reliability and performance.
Career Highlights
Mouloud Bakli is currently employed at Applied Materials, Inc., a leading company in the field of materials engineering and semiconductor manufacturing. His work at Applied Materials has allowed him to collaborate with cutting-edge technologies and contribute to advancements in microelectronic device fabrication.
Collaborations
Throughout his career, Bakli has worked alongside notable colleagues such as Steve G. Ghanayem and Huyen T. Tran. These collaborations have further enriched his research and development efforts, leading to innovative solutions in the microelectronics sector.
Conclusion
Mouloud Bakli's contributions to the field of microelectronics through his patents and work at Applied Materials, Inc. highlight his role as a key innovator. His advancements in barrier processes and metal nitride film formation are paving the way for the next generation of electronic devices.