The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2003
Filed:
Nov. 09, 1998
Applicant:
Inventors:
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A method for reducing the resistivity in a gate electrode is described. In one embodiment of the present invention, a silicon layer is formed on a substrate. A tungsten silicide layer is then formed on the silicon layer. The tungsten silicide layer is implanted with boron ions and an anneal is performed. The tungsten silicide layer and silicon layer are then patterned to form a gate electrode.