Applied Materials, Inc.

Mouloud Bakli

Steve G Ghanayem

Huyen T Tran

Pravin K Narwankar

Ravi Rajagopalan

Randall Scott Urdahl

Shankarram Athreya

Herve Monchoix

Asher Sinensky

Denis Sauvage

The formation of a barrier layer over a high k dielectric layer and deposition of a conducting layer over the barrier layer prevents intermigration between the species of the high k dielectric layer and the conducting layer and prevents oxygen scavenging of the high k dielectric layer. One example of a capacitor stack device provided includes a high k dielectric layer of Ta O , a barrier layer of TaON or TiON formed at least in part by a remote plasma process, and a top electrode of TiN. The processes may be conducted at about 300 to 700&deg; C. and are thus useful for low thermal budget applications. Also provided are MIM capacitor constructions and methods in which an insulator layer is formed by remote plasma oxidation of a bottom electrode.

Processes for making a barrier between a dielectric and a conductor and products produced therefrom

The invention provides a method for forming a metal nitride film by depositing a metal oxide film on the substrate and exposing the metal oxide film to a nitrating gas to densify the metal oxide and form a metal nitride film. The metal oxide film is deposited by the decomposition of a chemical vapor deposition precursor. The nitrating step comprises exposing the metal oxide film to a thermally or plasma enhanced nitrating gas preferably comprising nitrogen, oxygen, and ammonia. The invention also provides a process for forming a liner/barrier scheme for a metallization stack by forming a metal nitride layer over the substrate by the densification of a metal oxide layer by a nitrating gas depositing a metal liner layer. Optionally, a metal liner layer may be deposited over substrate prior to the metal nitride layer to forma metal/metal nitride liner/barrier scheme. The invention further provides a process to form a microelectronic device comprising forming a first electrode, forming a metal nitride layer over the first electrode by densifying a metal oxide layer by a nitrating gas to form a metal nitride layer, depositing a dielectric layer over the metal nitride layer, and forming a second electrode over the dielectric layer. Alternatively, the metal nitride film may comprise the first and second electrodes.

Tantalum nitride CVD deposition by tantalum oxide densification

A method for reducing the resistivity in a gate electrode is described. In one embodiment of the present invention, a silicon layer is formed on a substrate. A tungsten silicide layer is then formed on the silicon layer. The tungsten silicide layer is implanted with boron ions and an anneal is performed. The tungsten silicide layer and silicon layer are then patterned to form a gate electrode.

Reduction of tungsten silicide resistivity by boron ion implantation

The invention provides a method for forming a metal nitride film by depositing a metal oxide film on the substrate and exposing the metal oxide film to a nitrating gas to densify the metal oxide and form a metal nitride film. The metal oxide film is deposited by the decomposition of a chemical vapor deposition precursor. The nitrating step comprises exposing the metal oxide film to a thermally or plasma enhanced nitrating gas preferably comprising nitrogen, oxygen, and anunonia. The invention also provides a process for forming a liner/barrier scheme for a metallization stack by forming a metal nitride layer over the substrate by the densification of a metal oxide layer by a nitrating gas depositing a metal liner layer. Optionally, a metal liner layer may be deposited over substrate prior to the metal nitride layer to form a metal/metal nitride liner/barrier scheme. The invention firer provides a process to form a microelectronic device comprising forming a first electrode, forming a metal nitride layer over the first electrode by densifying a metal oxide layer by a nitrating gas to form a metal nitride layer, depositing a dielectric layer over the metal nitride layer, and forming a second electrode over the dielectric layer. Alternatively, the metal nitride film may comprise the first and second electrodes.

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Crolles, France

Mouloud Bakli