Chigasaki, Japan

Motohide Nishimura

This inventor holds 1 USPTO granted patent. Top assignee: Ulvac, Inc.. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Motohide Nishimura. Retrieved from https://idiyas.com/inventor/motohide-nishimura-e4riyx6w

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Motohide Nishimura: Innovator in Sputtering Technology

Introduction

Motohide Nishimura is a notable inventor based in Chigasaki, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative work on sputtering targets.

Latest Patents

Nishimura holds a patent for a sputtering target and method of producing a sputtering target. The objective of this invention is to provide a sputtering target for producing an oxide semiconductor thin film with high properties, serving as a substitute for IGZO. The patent describes a sputtering target that includes an oxide sintered body composed of indium, tin, and germanium. The atom ratio of germanium is specified to be between 0.07 and 0.40, while the atom ratio of tin is between 0.04 and 0.60. This innovation allows for achieving transistor characteristics with mobility of 10 cm/Vs or more.

Career Highlights

Motohide Nishimura is associated with Ulvac, Inc., a company known for its advanced technology in vacuum equipment and materials. His work has been instrumental in enhancing the performance of semiconductor devices.

Collaborations

Nishimura has collaborated with notable colleagues, including Kentarou Takesue and Masaru Wada. Their combined expertise has contributed to the advancement of sputtering technology.

Conclusion

Motohide Nishimura's contributions to the field of semiconductor technology through his innovative patents highlight his role as a key inventor in this domain. His work continues to influence the development of high-performance electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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