San Jose, CA, United States of America

Motao Cao

This inventor holds 1 USPTO granted patent. Top assignee: Micron Technology Incorporated. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Motao Cao. Retrieved from https://idiyas.com/inventor/motao-cao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Motao Cao: Innovator in Memory Technology

Introduction

Motao Cao is a prominent inventor based in San Jose, CA (US). He has made significant contributions to the field of memory technology, particularly through his innovative patent work. His expertise and dedication to advancing memory devices have positioned him as a key figure in the industry.

Latest Patents

Motao Cao holds a patent for an "Erasing partially-programmed memory unit." This invention provides various embodiments for erasing one or more partially-programmed memory units of a memory device. Specifically, it involves monitoring partial program/erase cycles for a memory unit and performing an erasure based on this monitoring. This advancement is crucial for improving the efficiency and reliability of memory devices.

Career Highlights

Motao Cao is currently employed at Micron Technology Incorporated, a leading company in the semiconductor industry. His work at Micron has allowed him to collaborate with other talented professionals and contribute to groundbreaking advancements in memory technology.

Collaborations

Motao Cao has worked alongside his coworker, Falgun G Trivedi, to further enhance the development of memory solutions. Their combined efforts have led to innovative approaches in the field.

Conclusion

Motao Cao's contributions to memory technology through his patent and work at Micron Technology Incorporated highlight his role as an influential inventor. His dedication to innovation continues to shape the future of memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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