Takatsuki, Japan

Morio Inoue


Average Co-Inventor Count = 2.6

ph-index = 9

Forward Citations = 154(Granted Patents)


Location History:

  • Takatsuki, JA (1977 - 1978)
  • Takatsuki City, JP (1979)
  • Takatsuki, JP (1979 - 1981)
  • Ibaraki, JP (1990 - 1995)

Company Filing History:


Years Active: 1977-1995

Loading Chart...
12 patents (USPTO):Explore Patents

Title: **Morio Inoue: Pioneering Innovations in Crystal Evaluation and Resist Pattern Formation**

Introduction

Morio Inoue, based in Takatsuki, Japan, is a notable inventor recognized for his contributions to semiconductor technology and materials science. With a total of 12 patents to his name, Inoue has developed innovative methods and apparatus that enhance the evaluation and processing of crystals and semiconductor substrates, significantly influencing the field of semiconductor fabrication.

Latest Patents

Morio Inoue's latest patents include a "Crystal Evaluation Apparatus" and a "Crystal Evaluation Method." The apparatus is designed with a cell region that includes an anode and a cathode, along with multiple reservoir tanks for supplying aqueous solutions. These solutions facilitate the formation and removal of anodic oxide films in the cell region, while an integrated scanning microprobe microscope allows for detailed observation of semiconductor substrates.

The associated crystal evaluation method involves anodic oxidation on the semiconductor substrate, followed by the selective removal of the anodic oxide film using a unique mixture of hydrofluoric acid and ammonium fluoride. This method minimizes physical impacts on the substrate, enabling the exposure of secondary ion implantation defects, which can then be observed with high-resolution atomic force microscopy. Additionally, Inoue's techniques allow for accurate measurement of impurity concentration distributions across the substrate's surface.

Furthermore, Inoue's patent on forming a resist pattern illustrates an innovative approach to semiconductor processing. This method incorporates exposing a novolak type positive photoresist to ultraviolet light, followed by exposure to far ultraviolet light in an inert gas atmosphere. The result is a resist pattern with a specific gradient of solubility, achieving a contrast value twice as high as conventional methods and enabling the formation of high aspect ratio resist patterns.

Career Highlights

Throughout his career, Morio Inoue has worked with prestigious companies, including Matsushita Electric Industrial Co., Ltd. and Matsushita Electronics Corporation. His experience in these organizations has contributed to the evolution of semiconductor manufacturing processes and equipment.

Collaborations

Morio Inoue has collaborated with notable colleagues such as Kunio Itoh and Kunihiko Asahi. These partnerships have fostered an environment of innovation, allowing for the exchange of ideas and advancements in their respective fields.

Conclusion

Morio Inoue's contributions to the fields of material science and semiconductor technology are marked by his inventive spirit and dedication to advancing methodologies. With numerous patents reflecting his expertise, Inoue continues to influence the landscape of semiconductor processing, paving the way for future innovations in the industry.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…