The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 12, 1990

Filed:

Feb. 17, 1988
Applicant:
Inventors:

Yoshimitsu Okuda, Takatsuki, JP;

Morio Inoue, Ibaraki, JP;

Yukio Takashima, Osaka, JP;

Tohru Ohkuma, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03C / ;
U.S. Cl.
CPC ...
430326 ; 430328 ; 430330 ;
Abstract

Disclosed is a method of forming a resist pattern by exposing a novolak type positive photoresist to ultraviolet light in a pattern, irradiating the entire surface with far ultraviolet light with wavelength of 200 to 320 nm in an atmosphere with inert gas partial pressure ratio of 90% or more, and developing it. According to this method, a specific gradient of solubility in developing solution becoming higher from the surface toward the depthwise direction is provided, and a contrast value of twice as high as in the conventional method can be obtained, and a resist pattern of high aspect ratio is formed.


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