The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 1979
Filed:
Dec. 02, 1976
Kunio Itoh, Takatsuki, JP;
Morio Inoue, Takatsuki, JP;
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Abstract
In a semiconductor laser with light guide, wherein an active region to form the Fabry-Perot cavity is formed in a mesa part on a semiconductor substrate and mixed crystal semiconductor parts formed to fill the mesa-etched parts constitute light guides. The improvement is that a crystal semiconductor of the active region has the composition of Ga.sub.1-x Al.sub.x As (0.ltoreq.x<1) and a mixed crystal of the light guide has the composition of GaAs.sub.1-y P.sub.y (0<y<1) or Ga.sub.1-z Al.sub.z As (0<x<z<1) of sufficiently high (for instance, 10.sup.4 .OMEGA.cm) specific resistivity with respect to that of the active region, the value of y or z being selected to be smallest at a depth of the light guide where the lasing light is incident, and the energy gap of the mixed crystal part being selected to be larger than that of said active region, so that light loss in the light guide is decreased.