Moon Sik Jang

Title: Moon Sik Jang: Innovator in GaN-based Technology

Introduction

Moon Sik Jang is a prominent inventor based in Kwanju-si, South Korea. He is known for his contributions to the field of opto-electronic devices, particularly through his innovative methods for fabricating gallium nitride (GaN) based nitride layers. His work has significant implications for the development of high-efficiency and reliable electronic devices.

Latest Patents

Moon Sik Jang holds a patent for a "Method for fabricating GaN-based nitride layer." This invention involves a multi-step process that includes forming a silicon carbide buffer layer on a substrate, creating a wetting layer with a specific composition of In(x1)Ga(y1)N, and subsequently forming a nitride layer containing gallium and nitrogen. This method enhances the performance of opto-electronic devices, making them more efficient and reliable.

Career Highlights

Throughout his career, Moon Sik Jang has worked with notable companies in the technology sector. He has been associated with Epivalley Co. Ltd. and Samsung Electro-Mechanics Co., Ltd., where he has contributed to advancements in electronic materials and devices. His expertise in GaN technology has positioned him as a key figure in the industry.

Collaborations

Moon Sik Jang has collaborated with various professionals in his field, including his coworker Soo Kun Jeon. These collaborations have fostered innovation and development in the realm of opto-electronic devices.

Conclusion

Moon Sik Jang's contributions to the field of GaN-based technology highlight his role as an influential inventor. His patented methods and career achievements reflect his commitment to advancing electronic device efficiency and reliability.