The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2009
Filed:
Aug. 21, 2004
Soo Kun Jeon, Gunsan-si, KR;
Moon Sik Jang, Kwanju-si, KR;
Soo Kun Jeon, Gunsan-si, KR;
Moon Sik Jang, Kwanju-si, KR;
Epivalley Co., Ltd., Kyunggi-do, KR;
Samsung Electro-Mechanics Co., Ltd., Kyungki-do, KR;
Abstract
The present invention relates to a method for fabricating a gallium nitride(GaN) based nitride layer including a step of forming a silicon carbide buffer layer on a substrate, a step of forming a wetting layer having a composition of In(x1)Ga(y1)N (0<x1≦1, 0≦y1<1, x1+y1=1) on the silicon carbide buffer layer, and a step of forming a nitride layer containing gallium and nitrogen on the wetting layer, thereby can implement an opto-electronic device of high efficiency and high reliability.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile