Mohammed E Ul Haq

Title: **Innovations by Mohammed E Ul Haq: Pioneering Advances in Memory Technology**

Introduction

Mohammed E Ul Haq, an accomplished inventor based in Sunnyvale, CA, has made significant contributions to the field of semiconductor technology. With a total of two patents to his name, his groundbreaking innovations focus on enhancing the efficiency and performance of memory systems, particularly static and dynamic random access memories (SRAM and DRAM).

Latest Patents

One of Mohammed's latest patents is for a **Static Random Access Memory with Modulated Loads**. This invention introduces a novel design that includes multiple memory cells, a true-bit load, a complementary-bit load, and a sense amplifier along with an address transition detector. The address transition detector generates load pulses that switch off the loads immediately after selecting either of the memory cells, thereby accelerating signal development during read or write operations. The provision for modulating loads permits larger-than-standard currents when maximally on, facilitating quicker reads and overall faster SRAM performance.

Another remarkable patent by Mohammed is for a **Dynamic RAM with Reduced Substrate Noise and Equal Access and Cycle Time**. This invention describes a CMOS random access memory that effectively mitigates substrate noise caused by capacitive coupling of the bit lines to the substrate. The memory architecture includes access circuitry for each column of cells, comprising differential bit lines and a CMOS sense amplifier designed to ensure that access and cycle times remain equal. By simultaneity charging and discharging the bit lines at the beginning of each memory access cycle, this innovation virtually eliminates the typical substrate noise that affects memory performance.

Career Highlights

Throughout his career, Mohammed E Ul Haq has gained valuable experience while working for reputable companies in the technology sector, notably **VLSI Technology, Inc.** and **Visic, Inc.** His role in these organizations allowed him to hone his skills in semiconductor design and memory technology, contributing to his innovative patent portfolio.

Collaborations

In his professional journey, Mohammed has collaborated with notable colleagues in the field, including Kenneth R Smits and Peter J Bagnall. These partnerships have likely fostered an environment of creativity and shared expertise, further enhancing the quality and impact of his innovations.

Conclusion

Mohammed E Ul Haq stands out as a significant figure in the realm of memory technology, as evidenced by his patents and collaborations. His contributions to the design and efficiency of SRAM and DRAM highlight his role as an innovator who continuously seeks to advance the field, making memories faster and more reliable for various applications.