This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Globalfoundries U.S. Inc.. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Mohammed Ahmed Fouad Ibrahim Darwish: Innovator in Semiconductor Technology
Introduction: Mohammed Ahmed Fouad Ibrahim Darwish is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.
Latest Patents: Mohammed holds a patent titled "Gate structure over corner segment of semiconductor region." This patent describes a gate structure that is strategically placed over a corner segment of a semiconductor region. The invention includes a semiconductor region within a substrate, featuring a first edge, a second edge oriented perpendicularly to the first edge, and a first corner segment connecting the two edges. The first gate structure extends over the first edge and entirely covers both the first edge and the first corner segment of the semiconductor region. This innovation enhances the performance and efficiency of semiconductor devices.
Career Highlights: Mohammed is currently employed at Globalfoundries U.S. Inc., a leading company in semiconductor manufacturing. His work at Globalfoundries has allowed him to apply his expertise in semiconductor technology and contribute to the advancement of the industry.
Collaborations: Mohammed has collaborated with esteemed colleagues, including Kiril Biserov Borisov and David C Pritchard. These collaborations have fostered a productive environment for innovation and development in semiconductor technology.
Conclusion: Mohammed Ahmed Fouad Ibrahim Darwish is a distinguished inventor whose work in semiconductor technology has led to valuable advancements in the field. His patent and contributions reflect his commitment to innovation and excellence in technology.