Denton, TX, United States of America

Mohamed El Bouanani


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Mohamed El Bouanani

Introduction

Mohamed El Bouanani is a notable inventor based in Denton, TX (US). He has made significant contributions to the field of substrate processing, particularly through his innovative patent. His work is recognized for its potential applications in various technological advancements.

Latest Patents

El Bouanani holds a patent titled "Method for removing contaminants on a substrate." This patent describes a method of processing a substrate that involves depositing a dielectric layer containing a metal oxide. A portion of this dielectric layer is then removed to create a dielectric structure, exposing the substrate's surface. The dielectric layer can be patterned using standard photolithographic techniques and etching. Following this, an oxide layer is formed on the exposed surface of the substrate using ozone generated by ultraviolet radiation. Finally, the oxide layer is removed through an etching process. This innovative method has the potential to enhance substrate processing techniques.

Career Highlights

El Bouanani is affiliated with the University of North Texas, where he contributes to research and development in his field. His work at the university allows him to collaborate with other experts and advance his innovative ideas.

Collaborations

Some of his notable coworkers include Manuel A Quevedo-Lopez and Robert M Wallace. Their collaboration fosters a dynamic research environment that encourages innovation and the sharing of ideas.

Conclusion

Mohamed El Bouanani's contributions to substrate processing through his patent demonstrate his commitment to innovation and advancement in technology. His work at the University of North Texas and collaborations with fellow researchers further enhance his impact in the field.

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