Yokohama, Japan

Mitsuyuki Yamaguchi

This inventor holds 1 USPTO granted patent. Top assignee: Tokyo Electron Limited. Active years: 1992.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mitsuyuki Yamaguchi. Retrieved from https://idiyas.com/inventor/mitsuyuki-yamaguchi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 20(Granted Patents)


Company Filing History:


Years Active: 1992

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1 patent (USPTO):Explore Patents

Title: Mitsuyuki Yamaguchi: Innovator in Ion Implantation Technology

Introduction

Mitsuyuki Yamaguchi is a prominent inventor based in Yokohama, Japan. He is known for his significant contributions to the field of ion implantation technology. His innovative work has led to advancements that are crucial for various applications in semiconductor manufacturing.

Latest Patents

Yamaguchi holds a patent for ion implantation equipment. This equipment is designed for implanting an ion beam into a target. It is characterized by the induction of electrons in the direction of the injected ion beam. Additionally, a predetermined bias voltage is applied between the plasma generation chamber and Faraday.

Career Highlights

Mitsuyuki Yamaguchi has made notable strides in his career, particularly through his work at Tokyo Electron Limited. His expertise in ion implantation has positioned him as a key figure in the development of advanced semiconductor technologies.

Collaborations

Yamaguchi has collaborated with esteemed colleagues such as Shuji Kikuchi and Masahiko Matsudo. These partnerships have fostered innovation and have contributed to the success of various projects within the field.

Conclusion

Mitsuyuki Yamaguchi's contributions to ion implantation technology exemplify his role as a leading inventor in the semiconductor industry. His work continues to influence advancements in technology and manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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