Kanagawa, Japan

Mitsuru Ikeda

This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 1986.


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:

goldMedal1 out of 834,411 
Other
 patents

Years Active: 1986

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1 patent (USPTO):Explore Patents

Title: The Innovations of Mitsuru Ikeda

Introduction

Mitsuru Ikeda is a notable inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of static induction transistors.

Latest Patents

Ikeda holds a patent for a "Fabrication process of static induction transistor and solid-state image." This innovative process involves implanting ions of an impurity element into a semiconductor layer to form a gate region. Additionally, ions of a lighter element are implanted into the gate region, creating multiple concentration profiles in the depth direction of the semiconductor layer. The semiconductor layer is then annealed at a relatively low temperature to finalize the gate region. This technology is crucial for fabricating solid-state image sensor devices.

Career Highlights

Throughout his career, Ikeda has focused on advancing semiconductor fabrication techniques. His work has paved the way for improved performance in electronic devices, particularly in imaging technologies.

Collaborations

Ikeda has collaborated with esteemed colleagues such as Junichi Nishizawa and Sohbe Suzuki, contributing to the advancement of semiconductor research and development.

Conclusion

Mitsuru Ikeda's innovative work in semiconductor technology, particularly his patent for the fabrication process of static induction transistors, showcases his significant impact on the field. His contributions continue to influence advancements in electronic imaging technologies.

Profile summary based on public USPTO records.
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