The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 1986
Filed:
Dec. 14, 1983
Junichi Nishizawa, Sendai-shi, Miyagi, JP;
Sohbe Suzuki, Sendai-shi, Miyagi, JP;
Mitsuru Ikeda, Kaisei-machi, Ashigarakami-gun, Kanagawa, JP;
Hideki Mutoh, Kaisei-machi, Ashigarakami-gun, Kanagawa, JP;
Other;
Abstract
In a process for fabricating a static induction transistor having a gate region which is formed in a semiconductor layer including a channel region, ions of an impurity element are implanted into the semiconductor layer from the surface thereof to form the gate region. Ions of an element lighter than the impurity element are implanted into the gate region from the surface of the semiconductor layer in such a way that the concentration of the light element exhibits a plurality of profiles in the depth direction of the semiconductor layer. The semiconductor layer is annealed at a relatively low temperature after the two implanting steps to form the gate region in the semiconductor layer. A solid-state image sensor device is fabricated by using the static induction transistor as a picture cell.