Location History:
- Hinondemachi, JP (1983)
- Hinode, JP (1992 - 1993)
- Tokyo, JP (1993)
Company Filing History:
Years Active: 1983-1993
Title: Mitsuo Nanba: Innovator in Semiconductor Technology
Introduction
Mitsuo Nanba is a prominent inventor based in Hinode, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on improving the efficiency and performance of semiconductor devices.
Latest Patents
One of his latest patents is a semiconductor bipolar transistor with concentric regions. This vertical bipolar transistor arrangement ensures that the distance between the emitter and the isolation region is optimized. By maintaining this distance, the carriers emitted do not get trapped, which helps in preventing a drop in the cut-off frequency. Another notable patent is a method of manufacturing a semiconductor device. In this method, a boron-doped amorphous silicon film is formed using CVD under specific conditions. This innovative approach allows for the formation of a pn junction that is much shallower than those created using conventional methods.
Career Highlights
Mitsuo Nanba is currently employed at Hitachi, Ltd., where he continues to advance semiconductor technology. His work has been instrumental in developing new methods and devices that enhance the performance of electronic components.
Collaborations
He has collaborated with notable coworkers, including Takeo Shiba and Tohru Nakamura, contributing to various projects and innovations in the semiconductor field.
Conclusion
Mitsuo Nanba's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His innovative approaches continue to shape the future of electronic devices.