The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 1993
Filed:
Feb. 11, 1992
Applicant:
Inventors:
Mitsuo Nanba, Hinode, JP;
Tohru Nakamura, Tanashi, JP;
Nakazato Kazuo, Kokubunji, JP;
Takeo Shiba, Kodaira, JP;
Katsuyoshi Washio, Tokorozawa, JP;
Kiyoji Ikeda, Hachioji, JP;
Takahiro Onai, Hachioji, JP;
Masatada Horiuchi, Koganei, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257653 ; 257592 ; 257565 ;
Abstract
A vertical bipolar transistor arrangement in which the distance between the emitter and the isolation region is kept within a range determined by the sum of emitter depth and base width (i.e., the thickness of the base in the depth direction). This keeps the carriers given by the emitter from getting trapped inside, thereby preventing the cut-off frequency from dropping.