Hitachi, Ltd.

Mitsuo Nanba

Takeo Shiba

Tohru Nakamura

Katsuyoshi Washio

Masatada Horiuchi

Takahiro Onai

Kiyoji Ikeda

Takashi Kobayashi

Masao Kondo

Takashi Hashimoto

Nobuyoshi Kobayashi

Atsushi Hiraiwa

Kazuo Nakazato

Masahiko Ogirima

Akira Shintani

Shimpei Iijima

Hirotsugu Kozuka

Nakazato Kazuo

A vertical bipolar transistor arrangement in which the distance between the emitter and the isolation region is kept within a range determined by the sum of emitter depth and base width (i.e., the thickness of the base in the depth direction). This keeps the carriers given by the emitter from getting trapped inside, thereby preventing the cut-off frequency from dropping.

Semiconductor bipolar transistor with concentric regions

A boron doped amorphous silicon film is formed by CVD under the conditions of a pressure lower than 1 atm and a temperature higher than 200.degree. C. and lower than 400.degree. C. by using at least one of disilane and trisilane, and diborane as source gases. Since the resultant amorphous silicon film can diffuse impurities at a lower temperature than in the case of the polycrystalline silicon film formed by the conventional method, a pn junction much shallower than in the prior art can be formed.

Method of manufacturing semiconductor device

A semiconductor device including a polycrystalline silicone resistor which has a resistance of 40 k.OMEGA.-800 k.OMEGA. and which is formed by a polycrystalline silicon film having a specific resistivity of 0.01 .OMEGA..cm-0.1 .OMEGA..cm. The resistor having the above resistance, which has previously been difficult to fabricate, can be fabricated with a high accuracy, so it is very useful for several kinds of semiconductor integrated circuits such as bipolar memory.

Polycrystalline silicon resistor for use in a semiconductor integrated

Semiconductor device with optimal distance between emitter and trench

Alumina or aluminum is arranged on, or in the vicinity of, a wafer surface into which an impurity, particularly antimony, is to be diffused, and the impurity is vapor-diffused. The impurity can be diffused in much larger quantities than in a prior art vapor diffusion, and a very low sheet resistance for the diffused layer of antimony can be attained.

Method of diffusing an impurity

Growing community of inventors

Hinode, Japan

Mitsuo Nanba