Mitsuhiro Toya

Title: Mitsuhiro Toya: Semiconductor Device Innovation

Introduction

Mitsuhiro Toya is an inventor based in Tokyo, Japan, associated with Renesas Electronics Corporation. His patent work includes a semiconductor technology designed to reduce capacitor parasitic capacitance while limiting the space the capacitor occupies.

Latest Patents

Toya is listed on 1 patent: “Semiconductor Device, RF-IC and Manufacturing Method of the Same.” The invention forms a stacked structure from two capacitors that share an intermediate electrode. A step in that electrode increases the spacing between electrodes outside the capacitor formation region, while keeping the spacing smaller within the region. This arrangement is intended to reduce parasitic capacitance without requiring additional capacitor area.

Career Highlights

The available information connects Toya’s patent activity with Renesas Electronics Corporation and semiconductor device development. The patent describes a capacitor structure relevant to semiconductor devices and radio-frequency integrated circuits.

Collaborations

Toshinori Imai and Takeshi Saikawa are identified as Toya’s coworkers. The provided information does not specify their roles in the patent or establish them as co-inventors.

Conclusion

Mitsuhiro Toya’s documented patent contribution focuses on a compact capacitor structure intended to reduce parasitic capacitance in semiconductor devices and RF integrated circuits.