Hwaseong, South Korea

Mitsuhiro Okada

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Tokyo Electron Limited. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mitsuhiro Okada. Retrieved from https://idiyas.com/inventor/mitsuhiro-okada-22tf150r

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Mitsuhiro Okada: Innovator in Processing Apparatus Technology

Introduction

Mitsuhiro Okada is a notable inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of processing apparatus technology. His innovative work has led to the development of a unique patent that enhances the efficiency of semiconductor manufacturing processes.

Latest Patents

Mitsuhiro Okada holds a patent for a processing apparatus. This apparatus includes a first chamber with a gas first inlet and a first gas outlet, along with a plasma generator that generates plasma within the first chamber. Additionally, it features a second chamber with a second gas inlet and a second gas outlet. The control unit of the apparatus manages the gas supply and plasma application to effectively process silicon-containing films on substrates.

Career Highlights

Mitsuhiro Okada is currently associated with Tokyo Electron Limited, a leading company in the semiconductor manufacturing equipment industry. His role involves leveraging his expertise to advance the company's technological capabilities and contribute to innovative solutions in processing apparatus.

Conclusion

Mitsuhiro Okada's work exemplifies the spirit of innovation in the semiconductor industry. His patent for a processing apparatus showcases his commitment to enhancing manufacturing processes. His contributions continue to influence the field and drive advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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