Mitsuhiro Ishii

Title: Mitsuhiro Ishii and Semiconductor Anodization Technology.

Introduction

Mitsuhiro Ishii is an inventor associated with Fujisawa, Japan, and Canon Kabushiki Kaisha. His work includes an invention for anodizing semiconductor substrates while controlling how the substrate is supported and sealed in an electrolytic solution.

Latest Patents

Ishii is credited with 1 patent: “Anodization Apparatus with Supporting Device for Substrate to Be Treated.” The invention describes an apparatus that supports a semiconductor substrate between two electrodes in an electrolytic solution and applies voltage to anodize its surface.

An elastic sealing member supports the substrate’s peripheral portion while leaving a surface area exposed. A support jig with a tapered hollow portion holds the sealing member, and a device introduces gas or liquid into that hollow portion. The fluid pressure presses the sealing member into hermetic contact with the jig and the substrate’s perimeter. Together, the substrate, seal, and jig separate the electrolytic solution into electrically isolated parts, enabling anodization, including the formation of a porous silicon layer.

Career Highlights

The patent reflects Ishii’s contribution to semiconductor-processing equipment, particularly substrate support and electrolyte management during anodization. The available information identifies Canon Kabushiki Kaisha as his company but does not provide further details about his career.

Collaborations

Toru Takisawa and Takao Yonehara are identified as Ishii’s coworkers. The supplied information does not specify their roles in the patent or the extent of their collaboration.

Conclusion

Mitsuhiro Ishii’s patented anodization apparatus addresses substrate sealing and electrical isolation, supporting controlled processing of semiconductor surfaces.