Mitsuhiro Higuchi

Title: Mitsuhiro Higuchi: Innovator in Semiconductor Technology

Introduction

Mitsuhiro Higuchi is a notable inventor based in Kokubunji, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the design of integrated circuit devices. With a total of 2 patents, his work has had a considerable impact on the industry.

Latest Patents

Higuchi's latest patents include a semiconductor integrated circuit device that features MISFETs, each with a gate electrode that extends over a boundary region between an active region and an element isolation trench. The design allows the gate electrode to cross the active region, extending from one end to the other. Notably, the gate length in the boundary region is greater than that in the central portion of the active region. The gate electrode is configured in an H-type flat pattern, covering one side of the boundary region and parts of two sides along the gate-width direction. The MISFETs are formed in electrically separated wells and are connected in series to form part of a reference voltage generating circuit.

Career Highlights

Throughout his career, Mitsuhiro Higuchi has worked with various companies, including Renesas Technology Corporation. His expertise in semiconductor technology has positioned him as a key player in the development of innovative electronic devices.

Collaborations

Higuchi has collaborated with notable professionals in the field, including Akio Nishida and Noriyuki Yabuoshi. These collaborations have further enhanced his contributions to semiconductor technology.

Conclusion

Mitsuhiro Higuchi's work in semiconductor technology exemplifies innovation and dedication. His patents reflect a deep understanding of integrated circuit design, making him a significant figure in the industry.