This inventor holds 1 USPTO granted patent. Top assignees: Sharp Kabushiki Kaisha Corporation, The Ritsumeikan Trust. Active years: 2014.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
1 out of 25,982 
1 out of 62 Years Active: 2014
Title: Misaichi Takeuchi: Semiconductor Invention and Career
Introduction
Misaichi Takeuchi is an inventor associated with Kusatsu, Japan. His work includes a patent for a semiconductor device featuring an aluminum nitride layer with a void formed within it.
Latest Patents
Takeuchi is credited with 1 patent: “Semiconductor Device Having Aluminum Nitride Layer with Void Formed Therein.” The patent describes a crystal-growth method intended to suppress dislocations, cracks, and substrate warping. The method heats a silicon substrate and then forms a depressed structure on its surface by supplying a gas containing at least trimethylaluminum (TMA).
Career Highlights
Takeuchi’s listed professional affiliations include The Ritsumeikan Trust and Sharp Kabushiki Kaisha Corporation. His patent work reflects an interest in group III nitride semiconductor growth and techniques for improving substrate quality.
Collaborations
Takeuchi’s listed coworkers include Yoshihiro Ueta and Yoshinobu Aoyagi.
Conclusion
Misaichi Takeuchi’s recorded invention addresses challenges in semiconductor crystal growth, with a method designed to reduce defects and warping in silicon substrates.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile