The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2014
Filed:
Mar. 03, 2011
Applicants:
Yoshihiro Ueta, Osaka, JP;
Masataka Ohta, Osaka, JP;
Yoshinobu Aoyagi, Kusatsu, JP;
Misaichi Takeuchi, Kusatsu, JP;
Inventors:
Yoshihiro Ueta, Osaka, JP;
Masataka Ohta, Osaka, JP;
Yoshinobu Aoyagi, Kusatsu, JP;
Misaichi Takeuchi, Kusatsu, JP;
Assignees:
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
The Ritsumeikan Trust, Kyoto-shi, Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of crystal growth is provided which can suppress development of dislocations and cracks and a warp in a substrate. The method of crystal growth of a group III nitride semiconductor has: a step of heating a silicon substrate; and a step of forming a depressed structure on the substrate surface by advance-feeding onto the heated silicon substrate a gas containing at least TMA (trimethylaluminum).