Mirmajid Seyyedy

This inventor holds 77 USPTO granted patents, primarily in MRAM Technology (CPC class 3652). Top assignee: Micron Technology Incorporated. Active years: 1990-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mirmajid Seyyedy. Retrieved from https://idiyas.com/inventor/mirmajid-seyyedy

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 77

% Patents Active = 90.9

Average Co-Inventor Count = 1.5

ph-index = 23

Forward Citations = 1,809(Granted Patents)

Forward Citations (Not Self Cited) = 1,719(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

77 out of 39,222

Micron Technology Incorporated

patents

Years Active: 1990-2013

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Areas of Expertise:

MRAM Array

Memory Cell Structure

Magnetic Tunneling Junction

Data Compression

Error Correction

Flip Chip Assembly

Stacked Memory

Column Decode Circuits

Antifuse Device

Low Voltage Sensing

Redundancy Antifuse Bank

77 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8451642 - Hybrid MRAM array structure and operation (2013-05-28),

2. 8154004 - Hybrid MRAM array structure and operation (2012-04-10),

3. 7978491 - Stacked memory cell structure and method of forming such a structure (2011-07-12),

4. 7732221 - Hybrid MRAM array structure and operation (2010-06-08),

5. 7562268 - Method and apparatus for testing a memory device with compressed data using a single output (2009-07-14),

6. 7440339 - [object Object] (2008-10-21),

7. 7405966 - Magnetic tunneling junction antifuse device (2008-07-29),

8. 7339812 - [object Object] (2008-03-04),

9. 7339811 - Stacked columnar 1T-nMTJ MRAM structure and its method of formation and operation (2008-03-04),

10. 7330367 - [object Object] (2008-02-12),

11. 7209378 - Columnar 1T-N memory cell structure (2007-04-24),

12. 7176065 - Magnetic tunneling junction antifuse device (2007-02-13),

13. 7126200 - Integrated circuits with contemporaneously formed array electrodes and logic interconnects (2006-10-24),

14. 7042749 - Stacked 1T-nmemory cell structure (2006-05-09),

15. 7023743 - [object Object] (2006-04-04),

Title: Innovations of Mirmajid Seyyedy in MRAM Technology

Introduction

Mirmadjid Seyyedy is a prominent inventor based in Boise, ID, known for his significant contributions to the field of memory technology. With a remarkable portfolio of 77 patents, Mirmajid has been instrumental in the advancement of MRAM (Magnetoresistive Random Access Memory) technology. His inventions are at the forefront of innovation, providing improved efficiency and performance in data storage solutions.

Latest Patents

Among his noteworthy innovations is the latest patent titled "Hybrid MRAM Array Structure and Operation." This invention explores new variations on MRAM array architecture, amalgamating the advantages from both cross-point and 1T-1MTJ architectures. By utilizing the fast read-time and higher signal-to-noise ratio from the 1T-1MTJ architecture, alongside the higher packing density offered by the cross-point architecture, Seyyedy's invention has the potential to revolutionize data storage. A unique aspect of this design involves using a single access transistor to efficiently read multiple MRAM cells arranged vertically in a 'Z' axis direction, significantly enhancing the performance and density of MRAM arrays.

Career Highlights

Mirmadjid Seyyedy has spent a significant portion of his career at Micron Technology Incorporated, a leader in semiconductor storage solutions. His relentless pursuit of innovation has led him to develop several advanced technologies, positioning him as a key figure in the evolution of memory systems.

Collaborations

Throughout his innovative journey, Seyyedy has collaborated with several talented individuals in the field, including coworkers Hasan Nejad and Glen Earl Hush. These collaborations have fostered a creative environment that has allowed for the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Mirmadjid Seyyedy's contributions to MRAM technology are invaluable, as illustrated by his extensive array of patents and collaborative work with esteemed colleagues. His latest patent continues to push the boundaries of what is possible in memory architecture, combining cutting-edge technology with innovative design. As the field of data storage continues to evolve, Seyyedy's work will undoubtedly play a pivotal role in shaping its future.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]