This inventor holds 1 USPTO granted patent. Top assignee: Industrial Technology Research Institute. Active years: 2008.
Company Filing History:
Years Active: 2008
Title: The Innovations of Minn-Tsong Lin
Introduction
Minn-Tsong Lin is a prominent inventor based in Hsinchu, Taiwan. He is known for his significant contributions to the field of tunneling magnetoresistance devices. His innovative work has led to advancements in technology that enhance the performance of electronic devices.
Latest Patents
Minn-Tsong Lin holds a patent for a tunneling magnetoresistance device with a high magnetoimpedance (MI) effect. This device features a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer situated between the two ferromagnetic layers. When an alternating current is applied, the device exhibits at least 100% variation of real components between two alternating frequencies, at least 25% variation of imaginary components below the first frequency, and at least 8.5% variation of magneto capacitance (MC) ratio generated along the magnetization direction. He has 1 patent to his name.
Career Highlights
Minn-Tsong Lin is affiliated with the Industrial Technology Research Institute, where he continues to push the boundaries of research and development in his field. His work has been instrumental in advancing the understanding and application of magnetoresistance technologies.
Collaborations
He has collaborated with notable colleagues such as Kai-Shin Li and Yin-Ming Chang, contributing to a dynamic research environment that fosters innovation and creativity.
Conclusion
Minn-Tsong Lin's contributions to the field of tunneling magnetoresistance devices exemplify the spirit of innovation. His work not only enhances technological capabilities but also paves the way for future advancements in electronic devices.