The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2008
Filed:
Jul. 27, 2005
Mean-jue Tung, Hsinchu, TW;
Shi-yuan Tong, Hsinchu, TW;
Minn-tsong Lin, Hsinchu, TW;
Yin-ming Chang, Hsinchu, TW;
Kai-shin LI, Hsinchu, TW;
Mean-Jue Tung, Hsinchu, TW;
Shi-Yuan Tong, Hsinchu, TW;
Minn-Tsong Lin, Hsinchu, TW;
Yin-Ming Chang, Hsinchu, TW;
Kai-Shin Li, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A tunneling magnetoresistance device with high magnetoimpedance effect, a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer which is located between the first ferromagnetic layer and the second ferromagnetic layer. Wherein an alternating current is applied to the tunneling magnetoresistance device, the tunneling magnetoresistance device has at least 100% variation of real components between an applied first alternating frequency and an applied second alternating frequency, at least 25% variation of imaginary components below the first alternating frequency, and at least 8.5% variation of magneto capacitance (MC) ratio which are generated along the magnetization direction.