Hong Kong, China

Mingxiang Wang


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: The Innovations of Mingxiang Wang

Introduction

Mingxiang Wang is a prominent inventor based in Hong Kong, CN. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique polysilicon material that enhances the performance of semiconductor devices.

Latest Patents

Mingxiang Wang holds a patent for a polysilicon material and semiconductor devices formed therefrom. This invention involves a metal induced lateral crystallization (MILC) process, where a metal is deposited in a predefined pattern on amorphous silicon. The silicon is then heat treated at a first temperature to create a MILC poly-Si material. A subsequent heat treatment at a higher temperature induces recrystallization, significantly improving the material's structure and grain quality. This advancement offers substantial benefits to the performance of semiconductor devices made from this material. He has 1 patent to his name.

Career Highlights

Mingxiang Wang is affiliated with The Hong Kong University of Science and Technology, where he continues to push the boundaries of semiconductor research. His work is recognized for its innovative approach and practical applications in the industry.

Collaborations

Mingxiang Wang collaborates with esteemed colleagues such as Man Chit Wong and Hoi Sing Kwok. Their combined expertise fosters a dynamic research environment that drives innovation in semiconductor technology.

Conclusion

Mingxiang Wang's contributions to the field of semiconductor materials exemplify the impact of innovative thinking in technology. His work not only advances academic research but also has practical implications for the semiconductor industry.

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