The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2005
Filed:
Dec. 22, 2003
Man Wong, New Territories, HK;
Hoi Sing Kwok, Kowloon, HK;
Zhiguo Meng, Kowloon, HK;
Mingxiang Wang, New Territories, HK;
Man Wong, New Territories, HK;
Hoi Sing Kwok, Kowloon, HK;
Zhiguo Meng, Kowloon, HK;
Mingxiang Wang, New Territories, HK;
The Hong Kong University of Science and Technology, Kowloon, HK;
Abstract
A metal induced lateral crystallization (MILC) poly-silicon material is produced by depositing a metal in a predefined pattern on amorphous silicon, and heat treating the silicon at a first temperature to form a MILC poly-Si material. The MILC poly-Si material is further heat treated at a second temperature higher than the first temperature to induce recrystallization. The second high temperature recrystallization step significantly enhances the material structure, and in particular the grain structure, of the poly-Si material with substantial benefits to the performance of semiconductor devices made therefrom.