Hefei, China

Mingxia Cheng

This inventor holds 1 USPTO granted patent. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mingxia Cheng. Retrieved from https://idiyas.com/inventor/mingxia-cheng-xyiz0f23

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2024

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Mingxia Cheng: Innovator in Semiconductor Manufacturing

Introduction

Mingxia Cheng is a notable inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique method for manufacturing semiconductor structures.

Latest Patents

Mingxia Cheng holds a patent titled "Method for manufacturing semiconductor structure and semiconductor structure." This patent relates to the technical field of semiconductors and outlines a method that includes providing a base and sequentially stacking various layers, including conductive and dielectric layers. The process involves etching parts of these layers to form a trapezoidal structure, which is characterized by a small top and a large bottom. He has 1 patent to his name.

Career Highlights

Mingxia Cheng is currently employed at Changxin Memory Technologies, Inc., where he continues to advance semiconductor manufacturing techniques. His work is pivotal in enhancing the efficiency and effectiveness of semiconductor structures.

Collaborations

Mingxia collaborates with Yang Chen, a talented woman in the field, contributing to innovative projects and research in semiconductor technology.

Conclusion

Mingxia Cheng's contributions to semiconductor manufacturing highlight his role as an innovator in the industry. His patent and ongoing work at Changxin Memory Technologies, Inc. demonstrate his commitment to advancing technology in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…