Company Filing History:
Years Active: 2016-2019
Title: Innovations of Minghao Jin in Semiconductor Technology
Introduction
Minghao Jin is a prominent inventor based in Villach, Austria. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on advanced methods for manufacturing semiconductor devices, which are crucial for modern electronics.
Latest Patents
Minghao Jin's latest patents include a method of manufacturing a semiconductor device that features a charge compensation region underneath a gate trench. This innovative method involves a semiconductor substrate with a main surface and a rear surface, along with multiple doped regions that enhance the device's performance. Another notable patent describes a semiconductor device comprising trench structures, which includes a central portion with a transistor cell array in a semiconductor substrate. These trench structures are designed to optimize the arrangement of transistor cells, improving the overall efficiency of the device.
Career Highlights
Minghao Jin is currently employed at Infineon Technologies Austria AG, where he continues to push the boundaries of semiconductor innovation. His expertise in the field has led to the development of cutting-edge technologies that are essential for the advancement of electronic devices.
Collaborations
Minghao has collaborated with notable coworkers such as Oliver Blank and Rudolf Rothmaler. Their combined efforts contribute to the innovative environment at Infineon Technologies, fostering advancements in semiconductor technology.
Conclusion
Minghao Jin's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of efficient electronic devices, showcasing the importance of innovation in technology.