Wuhan, China

Ming Zeng

This inventor holds 1 USPTO granted patent and 5 published patent applications. Top assignee: Yangtze Memory Technologies., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ming Zeng. Retrieved from https://idiyas.com/inventor/ming-zeng-ojoi9j85

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Ming Zeng and Three-Dimensional Memory Innovation.

Introduction

Ming Zeng is an inventor associated with Wuhan, China, and Yangtze Memory Technologies Co., Ltd. His work includes a patent concerning three-dimensional memory and its manufacturing method.

Latest Patents

The provided information lists one patent for Ming Zeng: “Three-Dimensional Memory and Manufacturing Method Thereof.” The invention describes a memory structure built from alternating gate and dielectric layers, with vertical channel structures passing through the stack. A gate line slit divides the channels into two memory blocks and is itself divided into substructures by isolation regions. Connection structures link adjacent slit substructures across each isolation region. The disclosure addresses both the three-dimensional memory architecture and a method for manufacturing it. Ming Zeng is credited with 1 patent in the information provided.

Career Highlights

Ming Zeng’s listed patent work focuses on three-dimensional memory design and fabrication. The patent identifies Yangtze Memory Technologies Co., Ltd. as his company affiliation.

Collaborations

The provided information names Qingqing Wang and Jianlu Wang as Ming Zeng’s coworkers. It does not specify their roles in the patent or describe any direct collaboration with him.

Conclusion

Ming Zeng’s listed invention addresses the structure and manufacture of three-dimensional memory, reflecting his connection to memory technology development at Yangtze Memory Technologies Co., Ltd.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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