Ming-Yi Shen

Title: Innovations by Ming-Yi Shen in Integrated Circuit Technology

Introduction

Ming-Yi Shen is an accomplished inventor based in Portland, OR (US). He has made significant contributions to the field of integrated circuits, particularly through his innovative patent that addresses the challenges of interconnect structures.

Latest Patents

Ming-Yi Shen holds a patent titled "Interconnect structures with nitrogen-rich dielectric material interfaces for low resistance vias in integrated circuits." This invention focuses on integrated circuit structures that include an interconnect feature without a higher-resistance liner material. In the absence of a liner, metal of low resistance directly contacts an adjacent dielectric material, enabling lower resistance interconnects. Even for low-k dielectric compositions, the adhesion of the metal to the dielectric material is improved through the incorporation of nitrogen proximal to the interface. Prior to the deposition of the metal upon a surface of the dielectric, the surface is exposed to nitrogen species to form a nitrogen-rich compound at the surface. The metal deposited upon the surface may then be nitrogen-lean, such as a substantially pure elemental metal or metal alloy.

Career Highlights

Ming-Yi Shen is currently employed at Intel Corporation, where he continues to push the boundaries of technology in integrated circuits. His work has been instrumental in enhancing the performance and efficiency of electronic devices.

Collaborations

Ming-Yi collaborates with talented individuals such as Nita Chandrasekhar and Blake Bluestein, contributing to a dynamic and innovative work environment.

Conclusion

Ming-Yi Shen's contributions to integrated circuit technology through his patent demonstrate his commitment to innovation and excellence in the field. His work not only enhances the performance of electronic devices but also paves the way for future advancements in technology.