Hsinchu, Taiwan

Ming-Tsung Lee

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: The Innovations of Ming-Tsung Lee

Introduction

Ming-Tsung Lee is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique patent that enhances the performance of semiconductor devices.

Latest Patents

Ming-Tsung Lee holds a patent for a "Damascene process using cap layer." This patent describes a semiconductor device that includes a substrate, a low-k dielectric layer, a cap layer, and a conductive layer. The low-k dielectric layer is positioned over the substrate, while the cap layer is placed on top of the low-k dielectric layer. Notably, the carbon atom content of the cap layer is greater than that of the low-k dielectric layer. The conductive layer is integrated within both the cap layer and the low-k dielectric layer, showcasing an innovative approach to semiconductor design.

Career Highlights

Ming-Tsung Lee is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this esteemed company has allowed him to push the boundaries of technology and contribute to advancements in semiconductor manufacturing.

Collaborations

Ming-Tsung Lee has collaborated with notable colleagues, including Chia-Cheng Chou and Chung-Chi Ko. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Ming-Tsung Lee's contributions to semiconductor technology through his patent and work at Taiwan Semiconductor Manufacturing Company Limited highlight his role as a key innovator in the field. His advancements continue to influence the industry and pave the way for future developments.

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