Ming-Sheng Kuo

Title: **Innovative Contributions of Ming-Sheng Kuo**

Introduction

Ming-Sheng Kuo is a notable inventor based in Hsinchu, Taiwan, recognized for his significant contributions to the field of semiconductor technology. With a total of two patents under his name, his work showcases a commitment to advancing manufacturing processes in this critical industry.

Latest Patents

Ming-Sheng's latest patents include a **Method for Forming an Inter-Layer Dielectric Layer** and a **Method of Etching Silicon Nitride**.

The first patent outlines a sophisticated method for fabricating an inter-layer dielectric layer, which involves a series of steps that create multiple polysilicon lines and dielectric layers on a substrate. This process enhances the reliability and efficiency of semiconductor devices.

In his second patent, he introduces a method for etching a silicon nitride layer using anisotropic plasma etching. This technique utilizes a photo-resist layer as a mask while employing a specific mixture of gases for effective etching, significantly improving the precision in semiconductor manufacturing.

Career Highlights

Ming-Sheng Kuo works with United Microelectronics Corp., a leading company in the semiconductor industry. His position within this innovative environment allows him to leverage cutting-edge technology and collaborate on projects that push the boundaries of semiconductor advancements.

Collaborations

Throughout his career, Ming-Sheng has collaborated with noteworthy colleagues such as Yi-Chun Chang and Hsi-Mao Hsiao. Their collective expertise and teamwork contribute to the development of innovative solutions within their ventures.

Conclusion

Ming-Sheng Kuo’s work remains impactful in the semiconductor domain, with patents that encapsulate practical methodologies essential for modern manufacturing. His ongoing pursuits in innovation underscore the importance of dedicated inventors in shaping the future of technology.