Ming-Ching Zheng

Title: Innovations by Ming-Ching Zheng

Introduction

Ming-Ching Zheng is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of electronics, particularly in the design of circuits for memory devices. His innovative work has led to the development of a patent that addresses critical issues in dual-port SRAM technology.

Latest Patents

Ming-Ching Zheng holds a patent for a "Circuit for mitigating write disturbance of dual-port SRAM." This invention provides a circuit designed to mitigate write disturbances by incorporating a first and a second discharge control path. The first discharge control path connects to the bit lines of both ports and a first control line, while the second discharge control path connects to the inverse bit lines of the ports and the first control line. The circuit generates a first discharge current when the bit lines are at high and low voltage levels, respectively, and operates under the control line. Additionally, a second discharge current is generated under similar conditions for the inverse bit lines. This innovation enhances the reliability and performance of dual-port SRAM devices.

Career Highlights

Ming-Ching Zheng is currently employed at Faraday Technology Corporation, where he continues to push the boundaries of technology through his research and development efforts. His work at the company has been instrumental in advancing memory technology and improving device performance.

Collaborations

Ming-Ching Zheng collaborates with talented colleagues, including Ching-Te Chuang and Chien-Yu Lu. Their combined expertise fosters an environment of innovation and creativity, leading to groundbreaking advancements in their field.

Conclusion

Ming-Ching Zheng's contributions to the field of electronics, particularly through his patent on dual-port SRAM technology, highlight his role as a significant inventor. His work not only addresses existing challenges but also paves the way for future innovations in memory devices.