Hsinchu, Taiwan

Ming-Chin Chen

This inventor holds 1 USPTO granted patent. Top assignee: Epistar Corporation. Active years: 2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ming-Chin Chen. Retrieved from https://idiyas.com/inventor/ming-chin-chen-8m513azo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: The Innovations of Ming-Chin Chen

Introduction

Ming-Chin Chen is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the performance and efficiency of high power semiconductor devices.

Latest Patents

Ming-Chin Chen holds a patent for a high power semiconductor device. This innovative device is characterized by the formation of two diodes connected in parallel and a Schottky contact on a channel layer. This design effectively lowers the turn-on voltage and turn-on resistance while enhancing the breakdown voltage of the device. His patent represents a significant advancement in semiconductor technology.

Career Highlights

Ming-Chin Chen is currently employed at Epistar Corporation, a leading company in the field of optoelectronics. His work at Epistar has allowed him to contribute to various projects that push the boundaries of semiconductor applications. His expertise in the field has made him a valuable asset to the company.

Collaborations

Ming-Chin Chen has collaborated with several talented individuals, including Shang-Ju Tu and Yi-Chih Lin. These collaborations have fostered innovation and have led to advancements in their respective projects.

Conclusion

Ming-Chin Chen's contributions to semiconductor technology through his patent and work at Epistar Corporation highlight his role as an influential inventor. His innovative approach continues to shape the future of high power semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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