The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
Jul. 31, 2017
Applicant:
Epistar Corporation, Hsinchu, TW;
Inventors:
Assignee:
EPISTAR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/778 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/868 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/0611 (2013.01); H01L 29/0847 (2013.01); H01L 29/0891 (2013.01); H01L 29/1054 (2013.01); H01L 29/1066 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/4236 (2013.01); H01L 29/42316 (2013.01); H01L 29/66462 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 29/41766 (2013.01); H01L 29/868 (2013.01);
Abstract
This application provides a high power semiconductor device, which is characterized by forming two diodes connected in parallel and a schottky contact on a channel layer to lower the turn-on voltage and turn-on resistance of the high power semiconductor device at the same time and to enhance the breakdown voltage.