Taichung, Taiwan

Ming Chao Lin


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2016-2020

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2 patents (USPTO):Explore Patents

Title: Innovations of Ming Chao Lin

Introduction

Ming Chao Lin is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of memory technology, holding 2 patents that showcase his innovative approach to improving memory operations in integrated circuits.

Latest Patents

One of his latest patents is focused on reading memory cells. This invention involves performing a first read operation using a specific voltage level to read data from a memory array. It determines an instant bit count corresponding to the number of bits read and compares it to a recorded bit count from when the data was originally written. Depending on the difference between these counts, the data is either output directly or a second read operation is performed using a different voltage level.

Another significant patent is a method and apparatus for reduced read latency for consecutive read operations in integrated circuits. This innovation allows for reduced latency between consecutive read operations by maintaining a regulated output voltage during the transition between operation commands on the memory array. This advancement enhances the efficiency and speed of memory operations.

Career Highlights

Ming Chao Lin is currently employed at Macronix International Co., Ltd., a company known for its expertise in memory solutions. His work at Macronix has allowed him to focus on developing cutting-edge technologies that improve memory performance and reliability.

Collaborations

Ming collaborates with talented coworkers such as Han Sung Chen and Chun Hsiung Hung. Their combined expertise contributes to the innovative environment at Macronix, fostering advancements in memory technology.

Conclusion

Ming Chao Lin's contributions to memory technology through his patents reflect his dedication to innovation in the field. His work continues to influence the development of efficient memory solutions in integrated circuits.

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