Macronix International Co., Ltd.

Ming Chao Lin

Han Sung Chen

Chun-Hsiung Hung

Chun Hsiung Hung

A first read operation is performed using a first voltage level to read data from a memory array. An instant bit count corresponding to a number of bits in the data read from the memory array is determined. A recorded bit count corresponding to a number of bits in the data that was written at a time of writing the data to the memory array is accessed. A difference between the instant bit count and the recorded bit count is obtained. Conditioned on determining that the difference is less than or equal to a first threshold value, the data read from the memory array is output using the first read operation. Conditioned on determining that the difference is greater than the first threshold value, a second read operation is performed using a second voltage level that is distinct from the first voltage level.

Reading memory cells

An integrated circuit with memory can operate with reduced latency between consecutive operations such as read operations. At a first time, a first operation command is finished on a memory array on an integrated circuit. At a second time, a second operation command is begun on the memory array. A regulated output voltage from the charge pump is coupled to word lines in the memory array. From the first time to the second time, a regulated output voltage is maintained at about a word line operation voltage such as a read voltage.

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Taichung, Taiwan

Ming Chao Lin