Min Yan

Title: Min Yan - Innovator in Thin Film Deposition Technology

Introduction

Min Yan is a notable inventor based in Nieuwegein, Netherlands. He has made significant contributions to the field of atomic layer deposition (ALD) technology, particularly in the development of systems for growing thin films. With a total of three patents to his name, Yan's work is recognized for its innovative approach and technical precision.

Latest Patents

One of Min Yan's latest patents is a reaction system for growing a thin film. This atomic deposition apparatus includes a deposition chamber designed to deposit a thin film on a wafer mounted within a defined space. The chamber features a gas inlet that communicates with the space, allowing for efficient gas delivery. A gas system is positioned above the deposition chamber, which includes a mixer to combine multiple gas streams. Additionally, a transfer member is in fluid communication with the mixer and gas inlet, featuring horizontally divergent walls that spread the gas horizontally before it enters the gas inlet.

Career Highlights

Min Yan is currently employed at Asm America, Inc., where he continues to advance his research and development efforts in thin film technology. His expertise in ALD has positioned him as a key player in the industry, contributing to the growth and innovation of semiconductor manufacturing processes.

Collaborations

Throughout his career, Min Yan has collaborated with talented individuals such as Mohith E Verghese and Kyle Fondurulia. These collaborations have fostered a creative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Min Yan's contributions to the field of thin film deposition technology exemplify his innovative spirit and dedication to advancing semiconductor manufacturing. His patents reflect a commitment to improving processes that are essential for modern technology.