The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Jun. 21, 2012
Mohith Verghese, Phoenix, AZ (US);
Kyle Fondurulia, Phoenix, AZ (US);
Carl White, Gilbert, AZ (US);
Eric Shero, Phoenix, AZ (US);
Darko Babic, Chandler, AZ (US);
Herbert Terhorst, Amersfoort, NL;
Marko Peussa, Espoo, FI;
Min Yan, Nieuwegein, NL;
Mohith Verghese, Phoenix, AZ (US);
Kyle Fondurulia, Phoenix, AZ (US);
Carl White, Gilbert, AZ (US);
Eric Shero, Phoenix, AZ (US);
Darko Babic, Chandler, AZ (US);
Herbert Terhorst, Amersfoort, NL;
Marko Peussa, Espoo, FI;
Min Yan, Nieuwegein, NL;
ASM America, Inc., Phoenix, AZ (US);
Abstract
An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.